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Atomic Motion of Dopant During Interfacial Silicide Formation

Published online by Cambridge University Press:  15 February 2011

M. Wittmer ,
C.-Y. Ting  and
K. N. Tu
M. Wittmer
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598, (U.S.A.)
C.-Y. Ting
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598, (U.S.A.)
K. N. Tu
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598, (U.S.A.)
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Abstract

The redistribution of implanted dopant atoms during silicide formation has attracted much interest recently because of its important implications for shallow junction device technology. Ion channeling and electrical measurements have shown that dopant atoms are pushed ahead in front of the moving silicide-silicon interface during the growth of near-noble metal silicides. However, dopant redistribution has not been observed with refractory metal silicides. This unique feature of near-noble metal silicides is discussed in conjunction with the growth kinetics of these silicides.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 18: Symposium C – Interfaces and Contacts , 1982 , 191
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

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