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Atomic Layer Epitaxy

Published online by Cambridge University Press:  28 February 2011

Akira Usui
Akira Usui*
Affiliation:
Fundanvttntal Research Laboratories, NEC Corporation 34 Miyukigaoka, Tsukuba, Ibaraki 305, JAPAN
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Abstract

Atomic layer epitaxy(ALE) of III-V compound semiconductors is reviewed. This technology has grown in recent years because of potential applications to nanometer-order structures as well as to monolayer/cycle growth with high-uniformity in growth thickness, and to excellent selective-area growth. Recent developments in chloride ALE of various compounds and heterostructures are described. Potentials of ALE for producing such fine structures are shown.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 183
Copyright
Copyright © Materials Research Society 1990

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References

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