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Atomic Layer Epitaxy of Wide Bandgap II-VI Compound Semiconductor Superlattices

Published online by Cambridge University Press:  21 February 2011

M. Konagai ,
Y. Takemura ,
R. Kimura ,
N. Teraguchi  and
K. Takahashl
M. Konagai
Affiliation:
Tokyo Institute of Technology, Dept. of Electrical and Electronic Engineering, 2-12-1, Ohokayama, sMeguro-ku, Tokyo 152, Japan
Y. Takemura
Affiliation:
Tokyo Institute of Technology, Dept. of Electrical and Electronic Engineering, 2-12-1, Ohokayama, sMeguro-ku, Tokyo 152, Japan
R. Kimura
Affiliation:
Tokyo Institute of Technology, Dept. of Electrical and Electronic Engineering, 2-12-1, Ohokayama, sMeguro-ku, Tokyo 152, Japan
N. Teraguchi
Affiliation:
Tokyo Institute of Technology, Dept. of Electrical and Electronic Engineering, 2-12-1, Ohokayama, sMeguro-ku, Tokyo 152, Japan
K. Takahashl
Affiliation:
Tokyo Institute of Technology, Dept. of Electrical and Electronic Engineering, 2-12-1, Ohokayama, sMeguro-ku, Tokyo 152, Japan
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Abstract

ZnSe, ZnTe and ZnSe-ZnTe strained-layer superlattices (SLS's) have been successfully grown by atomic layer epitaxy (ALE) using molecular beam epitaxy (MBE-ALE). The ideal ALE growth, i.e., one monolayer per cycle of opening and closing the shutters of the constituent elements, was obtained for ZnSe in the substrate temperature range of 250-350° C. However, for ZnTe, precise control of the Te beam intensity is needed to obtain the ALE growth. Optical properties of the (ZnSe)l-(ZnTe) 1 SLS were evaluated by photoluminesence. ZnSe films were also grown by ALE using metalorganic molecular beam epitaxy (MOMBE-ALE). Diethylzinc (DEZn), diethylsulfur (DES) and diethylselenium (DESe) were used as source gases for Zn, S and Se, respectively. The ALE growth of ZnSe was achieved at substrate temperature between 250 and 300° C which is about 150° C lower than that for the conventional MOMBE.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 177
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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