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Atomic Force Microscopy Study of GaN Grown on Al2O3(0001) by LP-MOVPE

  • K. Xu (a1), D. H. Lim (a1), B. L. Liu (a1), X. L. Du (a1), G. H. Yu (a1), A. W. Jia (a1) (a2), A. Yoshikawa (a1) (a2) and K. Takahashi (a3)...

Abstract

There is currently a high degree of interest in understanding the diverse mechanisms that determine the growth morphology of epitaxial films. To understand and control over these mechanisms, it is essential to know how the growth mechanisms are correlated with morphologies. In GaN MOVPE processes, growth temperature has a remarkable effect on the film morphologies and properties. In present work, the temperature dependency of surface morphology of GaN epilayers grown by low-pressure metal-organic vapor phase epitaxy (LP-MOVPE) was studied using atomic force microscopy. It was demonstrated that dislocations strongly influence the growth mechanisms and the morphology of the films. Three growth modes were identified at different growth temperature ranged from 1030°C to 1100°C, which are, (1) spiral growth dominated by dislocation with screw type, (2) monolayer step flow, and (3) nucleation-assisted step flow growth. The significant effect of dislocation on the surface morphologies and growth mechanisms may be attributed to the high dislocation density and higher activation energy for a step overcoming the dislocation pinning in GaN. Because few dislocations will be introduced under monolayer step flow growth mode, we can infer the useful information about GaN initial growth.

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Atomic Force Microscopy Study of GaN Grown on Al2O3(0001) by LP-MOVPE

  • K. Xu (a1), D. H. Lim (a1), B. L. Liu (a1), X. L. Du (a1), G. H. Yu (a1), A. W. Jia (a1) (a2), A. Yoshikawa (a1) (a2) and K. Takahashi (a3)...

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