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Atomic Defects in Transition Metal Carbides and SiC Studied by Positron Annihilation

Published online by Cambridge University Press:  22 February 2011

A. A. Rempel ,
H. -E. Schaefer ,
M. Forster  and
A.I. Girka
A. A. Rempel
Affiliation:
Institute of Solid State Chemistry, Russian Academy of Sciences, Pervomaiskaya 91, GSP-145 Ekaterinburg 620219, Russia
H. -E. Schaefer
Affiliation:
Universität Stuttgart, Institut für Theoretische und Angewandte Physik, Pfaffenwaldring 57/VI, 70550 Stuttgart, Germany
M. Forster
Affiliation:
Universität Stuttgart, Institut für Theoretische und Angewandte Physik, Pfaffenwaldring 57/VI, 70550 Stuttgart, Germany
A.I. Girka
Affiliation:
Moscow Engineering Physics Institute, Kashirskoe Shosse 31, Moscow 115409, Russia
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Abstract

Nonstoichiometric defects in carbides of the Group IV and V transition metals and radiation-induced atomic defects in SiC were studied by positron lifetime measurements before and after low-temperature (80 K) electron irradiation and subsequent thermal annealing up to 1900 K. Agglomeration of radiation-induced atomic defects which strongly depends on the energy of the irradiation electrons and subsequent decay of the agglomerates in SiC is observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 327: Symposium N – Covalent Ceramics II: Non-Oxides , 1993 , 299
Copyright
Copyright © Materials Research Society 1994

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