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Atomic and Electronic Structure of High Purity SiC Grain Boundary

Published online by Cambridge University Press:  21 March 2011

Eriko Takuma  and
Hideki Ichinose
Eriko Takuma
Affiliation:
Department of Materials Science, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, JAPAN
Hideki Ichinose
Affiliation:
Department of Materials Science, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, JAPAN
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Abstract

Fully relaxed SiC grain boundaries were produced by the sublimation re-crystallization method. Several kinds of grain boundaries of bi- and tri-crystals were investigated applying an atomic resolution high-voltage transmission electron microscopy (ARHVTEM). The rotation axis and the rotation angle were common tofrequently observed grain boundaries, which were, respectively, 70.5 degrees and <1120>. But boundary planes differed from each other. It was shown that the atomic bonding direction was continuous across the stable grain boundary.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 652: Symposium Y – Influences of Interface & Dislocation Behavior on Microstructure Evolution , 2000 , Y10.5
Copyright
Copyright © Materials Research Society 2001

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References

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