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Atom- and Radical-Surface Sticking Coefficients Measured Using Resonance Enhanced Multiphoton Ionization (REMPI)

Published online by Cambridge University Press:  25 February 2011

Robert M. Robertson  and
Michel J. Rossi
Robert M. Robertson
Affiliation:
Present Address: Applied Materials Corporation, Santa Clara CA 95054
Michel J. Rossi
Affiliation:
Department of Chemical Kinetics, SRI International, Menlo Park CA 94025
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Abstract

Sticking coefficients γ of neutral transient species at ambient temperature were measured using in situ Resonance Enhanced Multiphoton Ionization (REMPI) of the transients in a Knudsen cell. γ for I and CF3I‡ on a stainless steel surface were 0.16 and >0.5, respectively, whereas γ for CF3 on the same surface was measured to <0.01; γof SiH2 on a growing carbon containing amorphous silicon surface was 0.11; this value increased to 0.15 for interaction of SiH2 with a “pure” growing silicon-hydrogen surface, and γ of SiH2‡ on both types of surfaces was found to be >0.5.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 251
Copyright
Copyright © Materials Research Society 1989

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References

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