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Atmospheric Pressure OMCVD Growth of GaAs Using Triethylarsenic and Alkylgallium Organometallic Precursors

Published online by Cambridge University Press:  26 February 2011

Donna M. Speckman  and
Jerry P. Wendt
Donna M. Speckman
Affiliation:
The Aerospace Corporation, Electronics Research Laboratory, P.O. Box 92957, Los Angeles, CA 90009
Jerry P. Wendt
Affiliation:
The Aerospace Corporation, Electronics Research Laboratory, P.O. Box 92957, Los Angeles, CA 90009
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Abstract

Triethylarsenic was successfully used as a substitute for arsine in the atmospheric pressure OMCVD growth of GaAs epilayers. N-type GaAs films were produced at V/III ratios of 14–45 and growth temperatures of 560–590°C. The highest quality epilayers obtained were grown at temperatures of 560–570°C and V/Ill ratios of 23–27, with the best films exhibiting net carrier concentrations and 77K mobilities of ∼1015 cm−3 and ∼14,000cm2/V-s, respectively. All of the films grown using Et3As were found to be contaminated with carbon, which appears to result from an inherent decomposition mechanism of the Et3As reagent.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 187
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

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