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Assessment of Transparent Conducting Zinc Oxide as a Tunneling Contact to p-GaN

Published online by Cambridge University Press:  10 February 2012

S. Musunuru ,
V. Kumbham ,
J. Justice ,
K. Lee ,
D. Korakakis  and
L. A. Hornak
S. Musunuru
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University-26506
V. Kumbham
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University-26506
J. Justice
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University-26506
K. Lee
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University-26506
D. Korakakis
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University-26506
L. A. Hornak
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University-26506
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Abstract

Use of aluminum alloyed zinc oxide (AZO) as a transparent contact to p-GaN has received significant attention for GaN/InGaN light emitting diodes applications. Reports show that AZO as deposited on p-GaN forms a Schottky contact given the large work-function difference between AZO and p-GaN [1]. However, utilization of a thin nickel layer inserted between the AZO and p-GaN can result in an ohmic contact [2], given that Ni forms an ohmic contact to p-GaN upon annealing. Here, we undertake simulation studies of this AZO/Ni interface as a function of Nickel layer. Simulation studies of the transport mechanism in this contact indicate the likelihood of a tunneling junction at the AZO/Ni interface, thus the entire AZO/Ni forming an ohmic contact to p-GaN. Potential to better control injected current density uniformity utilizing such a contact structure is also discussed.

Keywords

transparent conductoroptoelectronicsimulation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1396: Symposium O – Compound Semiconductors for Generating, Emitting and Manipulating Energy , 2012 , mrsf11-1396-o07-32
Copyright
Copyright © Materials Research Society 2012

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References

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