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Assessment of Metallic Trace Contaminants on Silicon Wafer Surfaces

  • H. J. Rath (a1), P. Stallhofer (a1), D. Huber (a1), P. Eichinger (a2) and I. Ruge (a2)...

Abstract

Neutron activation, atomic absorption, and voltammetric techniques are presented as appropriate analytical tools to monitor trace amounts of metallic impurities on large diameter silicon wafers. Detection limits and results are compared for standard wafers implanted with Fe, Cu, and Ni. DLTS measurements are included for implanted and as-grown doped wafers.

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Assessment of Metallic Trace Contaminants on Silicon Wafer Surfaces

  • H. J. Rath (a1), P. Stallhofer (a1), D. Huber (a1), P. Eichinger (a2) and I. Ruge (a2)...

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