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Aspects of Non-Volatility in a-Si:H Memory Devices

Published online by Cambridge University Press:  21 February 2011

M.J. Rose ,
A.J. Snell ,
P.G. Lecomber ,
J. Hajto ,
A.G. Fitzgerald  and
A.E. Owen
M.J. Rose
Affiliation:
Dept. Applied Physics and Electronic & Manufacturing Engineering, University of Dundee, Dundee, DD1 4HN, Scotland, U.K.
A.J. Snell
Affiliation:
Department of Electrical Engineering, University of Edinburgh, Edinburgh, EH9 3JL, Scotland, U.K.
P.G. Lecomber
Affiliation:
Dept. Applied Physics and Electronic & Manufacturing Engineering, University of Dundee, Dundee, DD1 4HN, Scotland, U.K.
J. Hajto
Affiliation:
Department of Electrical Engineering, University of Edinburgh, Edinburgh, EH9 3JL, Scotland, U.K.
A.G. Fitzgerald
Affiliation:
Dept. Applied Physics and Electronic & Manufacturing Engineering, University of Dundee, Dundee, DD1 4HN, Scotland, U.K.
A.E. Owen
Affiliation:
Dept. Applied Physics and Electronic & Manufacturing Engineering, University of Dundee, Dundee, DD1 4HN, Scotland, U.K.
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ABSTRACT.: a-Si:H p+-n-i devices, after a once only forming process, switch between two distinct states, both of which are memory states, and are electrically programmable with pulses in the nanosecond range with at least a 1 million cycle endurance. They are known to be non-volatile memory states which persist for long periods. This paper examines the nature of this non-volatility by looking at the effects of time, temperature, bias and radiation. It is found that these digital memory states persist with no change in state for at least four years under zero bias, and that they can withstand high temperatures both under bias and at zero bias. This and a resistance to radiation and a space environment shows that a mechanism of charge storage is unlikely and that they may have applications in hostile environments. The reason for such stability is unclear, but may be associated with the incorporation and distribution of metal in the filamentary region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 1075
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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