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A-Si:H Films Deposited by Dc-Masd Technique at High Substrate Temperature

Published online by Cambridge University Press:  10 February 2011

O. A. Golikova ,
A. N. Kuznetsov ,
V. Kh. Kudojarova ,
M. M. Kazanin  and
A. Ikosarev
O. A. Golikova
Affiliation:
A.F.Ioffe Physico-Technical Institute, 194021, St.Petersburg, Russia.
A. N. Kuznetsov
Affiliation:
A.F.Ioffe Physico-Technical Institute, 194021, St.Petersburg, Russia.
V. Kh. Kudojarova
Affiliation:
A.F.Ioffe Physico-Technical Institute, 194021, St.Petersburg, Russia.
M. M. Kazanin
Affiliation:
A.F.Ioffe Physico-Technical Institute, 194021, St.Petersburg, Russia.
A. Ikosarev
Affiliation:
A.F.Ioffe Physico-Technical Institute, 194021, St.Petersburg, Russia.
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Abstract

Dc-magnetron assisted silane decomposition technique has been tested for deposition of undoped a-Si:H at substrate temperature Ts=300–400°C. In the optimized conditions device-quality a-Si: H films were deposited independently of Ts. A low hydrogen content CH (up to 2 at.°) and microstructure variations are characteristic of the MASD films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 353
Copyright
Copyright © Materials Research Society 1996

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References

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