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a-SiC:H Doped with Reactive Gases and with Ion Implantation

  • F. Demichelis (a1), C. F. Pirri (a1), E. Tresso (a1), G. Della Mea (a2), V. Rigato (a2), P. Rava (a3) and G. Amato (a4)...

Abstract

Boron doped a-SiC:H samples have been obtained both by gas phase doping during film growth and by using ion implantation. All the implanted samples were annealed under vacuum to remove the damage introduced by ion implantation and to produce a dopant diffusion. Physical properties deduced by optical, electrical and structural characterization of the two sets of samples have been compared. Ion implantation technique allows a better control of the dopant dose but increases the compositional disorder and the obtained conductivity values are one order of magnitude lower than those of gas doped samples.

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