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Apriori Process-Property Relationships of GaN Epitaxial Growth in Ga/N/H/C/O Systems

Published online by Cambridge University Press:  21 March 2011

Constantine Loukeris ,
Shumaila Khan  and
Christos G. Takoudis
Constantine Loukeris
Affiliation:
Department of Chemical Engineering, Advanced Materials Research Laboratory University of Illinois at Chicago, Chicago, Illinois 60607, USA
Shumaila Khan
Affiliation:
Department of Chemical Engineering, Advanced Materials Research Laboratory University of Illinois at Chicago, Chicago, Illinois 60607, USA
Christos G. Takoudis
Affiliation:
Department of Chemical Engineering, Advanced Materials Research Laboratory University of Illinois at Chicago, Chicago, Illinois 60607, USA
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Abstract

A comprehensive thermodynamic analysis has been performed for the Ga/N/H/C/O system. Apriori process-property relationships of the metal organic chemical vapor deposition (MOCVD) of Gallium Nitride (GaN) are thus obtained. The parameter space for pure GaN growth is studied for system water vapor levels of 0.1 ppb – 10 ppm, system pressure between 10-6- 106 Torr, N/Ga feed ratios of 1 - 100,000, C/Ga feed ratios of 0 – 100, and H2/Ga feed ratios of 100 – 10,000. Higher growth temperatures for pure GaN are predicted at high operating pressures (for pressures greater than 0.1 Torr), low C/Ga feed ratios, high carrier gas flow rates, and mostly at low N/Ga feed ratios. Because relative C/Ga, N/Ga and H2/Ga feed ratios have been considered, the predictions in this study are applicable to any multiple and single precursor systems. Such analyses can be easily extended to the molecular beam epitaxy of GaN, when the feed ratio C/Ga = 0. Experimental data reported on the growth of GaN are found to be in good agreement with our theoretical predictions, for many systems that have included different source species.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I3.19.1
Copyright
Copyright © Materials Research Society 2002

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