Hostname: page-component-848d4c4894-xm8r8 Total loading time: 0 Render date: 2024-07-01T01:54:37.569Z Has data issue: false hasContentIssue false
  • English
  • Français

Applications of Surface Analysis by Laser Ionization (Sali) to Insulators and II–VI Compounds

Published online by Cambridge University Press:  22 February 2011

C. H. Becker ,
C. M. Stahle  and
D. J. Thomson
C. H. Becker
Affiliation:
Chemical Physics Laboratory, SRI International, Menlo Park, CA 94025
C. M. Stahle
Affiliation:
Stanford Electronics Laboratories, Stanford University, Stanford, CA 94305
D. J. Thomson
Affiliation:
Stanford Electronics Laboratories, Stanford University, Stanford, CA 94305
Get access

Abstract

Examples of the mass spectrometry of sputtered or evaporating neutral species obtained by SALI are presented for NBS Glass 610 (primarily a silicate), and an anodic oxide of HgCdTe. For the NBS glass, a SIMS spectra was recorded for comparison with SALI using the same apparatus. The raw SALI spectra of the glass is in semiquantitative accord with the known composition, in contrast to SIMS. Relative secondary ion yields can be determined for unknown complex materials by comparing SALI and SIMS spectra. Depth profiling measurements on the anodic oxides of Hg1−xCdxTe show a significant though depleted concentration of Hg in the oxide in contrast to numerous other analyses; this result is corroborated by RBS studies. Hg and also Te evaporation is monitored in real-time by SALI with large dynamic range capabilities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 48: Symposium E – Applied Materials Characterization , 1985 , 447
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Becker, C. H. and Gillen, K. T., Appl. Phys. Lett. 45, 1063 (1984).Google Scholar
2. Becker, C. H. and Gillen, K. T. in “Laser Chemical Processing of Semiconductor Devices,” eds. Houle, F. A., Deutsch, T. F., and Osgood, R. M. Jr, MRS Proceedings, Fall 1984 Meeting, p. 48.Google Scholar
3. Becker, C. H. and Gillen, K. T., J. Vac. Sci. Technol. A 3, (in press).Google Scholar
4. Werner, H. W. and Morgan, A. E., J. Appl. Phys. 47, 1232 (1976).Google Scholar
5. Davis, G. D., Sun, T. S., Buchner, S. P., and Byer, N. E., J. Vac. Sci. Technol. 19, 472 (1981).CrossRefGoogle Scholar
6. Morgen, P., Silberman, J. A., Lindau, I., and Spicer, W. E., J. Vac. Sci. Technol. 21, 161 (1981).Google Scholar
7. Seelmann-Eggebert, M., Brandt, G., and Richter, H. J., J. Vac. Sci. Technol. A 2, 11 (1984).CrossRefGoogle Scholar
8. Kaiser, U., Sander, P., Ganschow, O., and Benninghoven, A., Fresenius Z. Anal. Chem. 319, 877 (1984).Google Scholar
9. Catagnus, P. C. and Baker, C. T., US Patent No. 3,997,018 (24 August 1976).Google Scholar
10. Stahle, C. M., Thomson, D. J., Helms, C. R., Becker, C. H., and Simmons, A., submitted to Appl. Phys. Lett.Google Scholar