Hostname: page-component-848d4c4894-75dct Total loading time: 0 Render date: 2024-05-25T20:42:29.854Z Has data issue: false hasContentIssue false
  • English
  • Français

Applications of CdSe Thin Film Transistors in Flat Panel Displays

Published online by Cambridge University Press:  21 February 2011

Fang-Chen Luo
Fang-Chen Luo*
Affiliation:
Panelvision Corporation, 265 Kappa Drive, Pittsburgh, PA 15238
Get access

Abstract

CdSe TFT's have been successfully utilized in large-area TFT-addressed liquid crystal and electroluminescent display panels. Display panels up to 5″ × 5″ 250 × 250 elements have been demonstrated. CdSe TFTs have exhibited acceptable electrical characteristics, stability and reproductibility for display applications. In this paper, test results of CdSe TFT's in these areas will be reported.

For the fabrication of CdSe TFT matrix circuits for display applications, several methods such as the one-vacuum-pump-down process using aperture masks, the photolithographic process and the hybrid process have been used. A review and comparison of the results of these processes will be presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 33: Symposium D – Comparison of Thin Film Transistor and SOI Technologies , 1984 , 239
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Luo, F.C., Hester, W.A. and Brody, T.P., Proc. SID 191Z, pp. 63–67 (1978).Google Scholar
2. Luo, F.C., and Hoesly, D., SID Int. Symp. Digest, pp. 46–47 (1982).Google Scholar
3. Luo, F.C. and Hester, W.A, IEEE Trans. Electron Devices, ED–27, pp. 223–230 (1980).Google Scholar
4. Brody, T.P., Luo, F.C., Szpesi, Z.P. and Davies, D.H., IEEE Trans. Electron Devices, ED–22, pp. 739–749 (1975).Google Scholar
5. Brody, T.P., Luo, F.C., Davies, D.H. and Szepesi, Z.P., Presented at IEItM (1975).Google Scholar
6. Greeneich, E.W., IEEE Trans. Electron Devices, ED–34, pp. 898–902 (1977).Google Scholar
7. Lee, M.J., Judge, C.P. and Wright, S.W., Solid State Electron., 23, 1087 (1980).Google Scholar
8. Luo, F.C., Chen, I. and Genovese, F.C., IEEE Trans. Electron Devices, ED–28, pp. 740–743 (1981).Google Scholar
9. Luo, F.C., Pultorak, D. and Freeman, E., IEEE Trans. Electron Devices, ED–30, pp. 202–206 (1983).Google Scholar