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Application of Thin-Film Micromachining on Glass

Published online by Cambridge University Press:  10 February 2011

M. Boucinha ,
V. Chu  and
J.P. Conde
M. Boucinha
Affiliation:
lnstituto de Engenharia de Sistemas e Computadores (INESC), Lisbon, Portugal Department of Physics, Instituto Superior Técnico, Lisbon, Portugal
V. Chu
Affiliation:
lnstituto de Engenharia de Sistemas e Computadores (INESC), Lisbon, Portugal
J.P. Conde
Affiliation:
Department of Materials Engineering, Instituto Superior Técnico, Lisbon, Portugal
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Abstract

Three dimensional microstructures have been made on glass substrates using surface micromachining techniques. Bridge structures were fabricated using both hydrogenated amorphous silicon and microcrystalline silicon. A low density silicon nitride with an etch rate of 100 Å/s in buffered HF was used as the sacrificial layer. As an example of how micromachining can be applied to large area electronics, thin film transistors (TFT) with the dielectric replaced by an air-gap were fabricated. The electrical characteristics of the first working devices are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 85
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1 Howe, Roger T., J. Vac. Sci. Tecnnol. B 6, 1809 (1988).Google Scholar
2 Svensson, L., Plaza, J.A., Benitez, M.A., Esteve, J. and Lora-Tamayo, E., J. Micromech. Microeng. 6, 80 (1996).Google Scholar
3 Lang, Walter, Materials Science and Engineering R 17, 1 (1996).Google Scholar
4 Bums, D.W., Guckel, H., J. Vac. Sci. Technol. A 8, 3606 (1990).Google Scholar
5 Sniegowski, J.J, Solid State Technology, February 1996, p.83.Google Scholar