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The Application of Reactive ion Etching to Oxide Films on 150mm Substrates
Published online by Cambridge University Press: 21 February 2011
Abstract
The application of reactive ion etching to oxide films on 150mm sub-strates was studied. Etch rates of greater than 450 Å/min for thermal oxide with overall uniformities of less than ±5% have been observed. Selectivity of thermal oxide to polysilicon (20ω per square) has been observed to be in the range of 14:1 to 17:1.
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- Copyright © Materials Research Society 1985