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Application of Elastic Mid-IR-Laser-Light Scattering for Non-Destructive Inspection in Microelectronics

Published online by Cambridge University Press:  26 February 2011

Victor P. Kalinushkin ,
Vladimir A. Yuryev ,
Oleg V. Astafiev ,
Alexander N. Buzynin  and
Nikolay I. Bletskan
Victor P. Kalinushkin
Affiliation:
General Physics Institute of RAS, 38 Vavilov Street, Moscow, 117942, Russia
Vladimir A. Yuryev
Affiliation:
General Physics Institute of RAS, 38 Vavilov Street, Moscow, 117942, Russia
Oleg V. Astafiev
Affiliation:
General Physics Institute of RAS, 38 Vavilov Street, Moscow, 117942, Russia
Alexander N. Buzynin
Affiliation:
General Physics Institute of RAS, 38 Vavilov Street, Moscow, 117942, Russia
Nikolay I. Bletskan
Affiliation:
Research and Production Association ELMA, Zelenograd, Moscow, 103482, Russia
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Abstract

Some possible applications of the low-angle mid-IR-light scattering technique and some recently developed on its basis methods for non-destructive inspection and investigation of semiconductor materials and structures are discussed in the paper. The conclusion is made that the techniques in question might be very useful for solving a large number of problems regarding defect investigations and quality monitoring both in research laboratories and the industry of microelectronics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 615
Copyright
Copyright © Materials Research Society 1995

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