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Application of Diluted Magnetic Semiconductors and Quantum Dots to Spin Polarized Light Sources

  • Pallab Bhattacharya (a1), Sasan Fathpour (a1), Subhananda Chakrabarti (a1), Michael Holub (a1) and Siddhartha Ghosh (a2)...


The magnetic properties of single and multiple layers of GaMnAs, grown by molecular beam epitaxy, have been investigated for application as spin injector layers in spin polarized lights sources. Curie temperatures, T C , as high as 150K have been measured in 15nm Ga0.95Mn0.05As films and similar results are obtained for multiple thin layers of GaMnAs separated by 5nm thick GaAs layers. We have also investigated the properties of self-organized InMnAs quantum dots buried in a GaAs or GaMnAs matrix. Magnetization measurements indicate T C >300K in the dot heterostructures. Light-emitting diode heterostructures with 150nm Ga0.95Mn0.05As spin injector layers and In0.4Ga0.6As quantum dot active regions were grown and fabricated into 600μm diameter mesa-shaped surface-emitting devices. Polarized light at 1.05μm is observed with an output polarization efficiency of 26% at a record high temperature.



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Application of Diluted Magnetic Semiconductors and Quantum Dots to Spin Polarized Light Sources

  • Pallab Bhattacharya (a1), Sasan Fathpour (a1), Subhananda Chakrabarti (a1), Michael Holub (a1) and Siddhartha Ghosh (a2)...


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