Hostname: page-component-76fb5796d-5g6vh Total loading time: 0 Render date: 2024-04-26T03:23:18.131Z Has data issue: false hasContentIssue false
  • English
  • Français

Antimony Clustering due to High-dose Implantation

Published online by Cambridge University Press:  17 March 2011

Kentaro Shibahara  and
Dai Onimatsu
Kentaro Shibahara
Affiliation:
Research Center for Nanodevices and Systems Hiroshima University 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, Japan
Dai Onimatsu
Affiliation:
Research Center for Nanodevices and Systems Hiroshima University 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, Japan
Get access

Abstract

Antimony implantation is a promising technique for fabricating ultra-shallow n+/p junctions for extensions of sub-100-nm n-MOSFETs. By increasing the Sb+ implantation dose to 6×1014 cm−2, sheet resistance (Rs) of an implanted layer was reduced to 260 /sq. for rapid thermal annealing (RTA) at 800°C. The obtained junction depth of 19 nm is suitable for sub-100-nm MOSFETs. However, the reduction in the sheet resistance showed a tendency to saturate. No pileup at the Si-SiO2 interface, which was the major origin of dopant loss in lower dose cases was, observed in Sb depth profiles in this case. However, in the case of 900°C RTA, Sb depth profiles indicated that Sb was nearly immobile in the region where Sb concentration exceeded 1×1020 cm−3. These results imply that the major limiting factor of Rs reduction under the highdose condition is Sb precipitation, which is different from the lower dose cases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 610: Symposium B – Si Front End Processing - Physics & Technology..II , 2000 , B8.5
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Shibahara, K., Mifuji, M., Kawabata, K., Kugimiya, T., Furumoto, H., Tsuno, M., Yokoyama, S., Nagata, M., Miyazaki, S. and Hirose, M., Tech. Digest Int. Electron Devices Meeting, 579 (1996).Google Scholar
2. Shibahara, K., Furumoto, H., Egusa, K., Koh, M. and Yokoyama, S., Mater. Res. Soc. Symp. Proc. 532 23 (1998).10.1557/PROC-532-23Google Scholar
3. Shibahara, K., Egusa, K. and Kamesaki, K., Extend. Abst. 1999 Int. Conf. Solid State Devices and Materials 314 (1999).Google Scholar
4. Shibahara, K., Egusa, K. and Kamesaki, K., Jpn. J. Appl. Phys. 39 2194 (2000).10.1143/JJAP.39.2194Google Scholar
5. Nobili, D., Angelucci, R., Armigliato, A., Landi, E. and Solumi, S., J. Electrochem. Soc. 136 1142 (1989).10.1149/1.2096808Google Scholar
6. Hashimoto, M., Deguchi, T., Yokoyama, S. and Hirose, M., Jpn. J. Appl. Phys. 33 L1799 (1994).10.1143/JJAP.33.L1799Google Scholar
7. Solmi, S., Baruffaldi, F. and Derdour, M., J. Appl. Phys. 71 697 (1992).10.1063/1.351329Google Scholar