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Antimony Cluster Manipulation on the Si(001) Surface by Means of STM

Published online by Cambridge University Press:  03 September 2012

I.I. Kravchenko ,
C.T. Salling  and
M.G. Lagally
I.I. Kravchenko
Affiliation:
Materials Science Department, University of Wisconsin, Madison, WI 53706.
C.T. Salling
Affiliation:
Materials Science Department, University of Wisconsin, Madison, WI 53706.
M.G. Lagally
Affiliation:
Materials Science Department, University of Wisconsin, Madison, WI 53706.
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Abstract

We present results of the manipulation of antimony clusters on Si(001) by means of a scanning tunneling microscope. By adjusting tip-sample separation and pulse voltage, an antimony cluster can be removed from the sample surface without damaging it. The success rate of the removed-cluster redeposition from the tip back onto the surface is 30%. In the remainder of the attempts a square shaped structure is created that had a hillock in the center. The hillock exhibits a metallic-like I-V curve. Such a structure cannot be created without an Sb cluster previously removed from the surface and located on the tip.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 205
Copyright
Copyright © Materials Research Society 1997

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