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Antiferroelectric Thin Films for Decoupling Capacitor and Microactuator Applications

Published online by Cambridge University Press:  10 February 2011

Baomin Xu ,
Neelesh G. Pai ,
Paul Moses  and
L. Eric Cross
Baomin Xu
Affiliation:
Intercollege Materials Research Laboratory, Pennsylvania State University, University Park, PA 16802
Neelesh G. Pai
Affiliation:
Intercollege Materials Research Laboratory, Pennsylvania State University, University Park, PA 16802
Paul Moses
Affiliation:
Intercollege Materials Research Laboratory, Pennsylvania State University, University Park, PA 16802
L. Eric Cross
Affiliation:
Intercollege Materials Research Laboratory, Pennsylvania State University, University Park, PA 16802
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Abstract

Lanthanum-doped or niobium-doped lead zirconate titanate stannate antiferroelectric thin films with the thickness of about 0.4 μm have been prepared from acetic acid-based or 2-methoxyethanol-based sol-gel method. All the films have the maximum polarization larger than 30 μC/cm2 and show zero remanent polarization. By choosing appropriate compositions, we can make the films have “square” hysteresis loops with very sharp phase transition or “slanted” hysteresis loops with very small hysteresis. The properties that are important for decoupling capacitor and microactuator applications are characterized. For decoupling capacitor applications, films having square hysteresis loops with energy storage density of up to 7 J/cm3 can be made, which release more than half of their stored charge in 10 ns with a maximum current density of more than 9400 A/cm2. For microactuator applications, the films can either have a strain level of 0.32% with very small hysteresis or have a strain level of 0.42% with moderate hysteresis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 493: Symposium U – Ferroelectric Thin Film VI , 1997 , 403
Copyright
Copyright © Materials Research Society 1998

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References

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