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Anomalous Magnetoresistance Behavior of Bismuth Antidot Arrays

Published online by Cambridge University Press:  01 February 2011

Oded Rabin  and
Mildred S. Dresselhaus
Oded Rabin
Affiliation:
Dept. of Chemistry, Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
Mildred S. Dresselhaus
Affiliation:
Dept. of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A. Dept. of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
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Abstract

Antidot arrays were formed in thin films of bismuth by the e-beam evaporation of the metal on the porous surface of porous anodic alumina templates. The magnetoresistance of the antidot array films was measured and compared to that of films deposited on glass slides. A significant difference in magnetoresistance behavior was observed, and this difference was attributed to the enhancement of the two dimensional weak antilocalization effect in the antidot arrays. Scattering rates were obtained by fitting the experimental results to the theoretical expression. The results indicate that the antidot morphology enhances the elastic scattering rate over the inelastic scattering rate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 788: Symposium L – Continuous Nanophase and Nanostructured Materials , 2003 , L12.1
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Bergmann, G., Phys. Rep. 107, 1 (1984).Google Scholar
2. Kawaguti, T. and Fujimori, Y., J. Phys. Soc. Japan 52, 722 (1983).Google Scholar
3. Beutler, D. E. and Giordano, N., Phys. Rev. B 38, 8 (1988).Google Scholar
4. White, H. and McLachlan, D. S., J. Phys. Condens. Matter 1, 6665 (1989).Google Scholar
5. Dai, J. and Tang, J., J. Appl. Phys. 92, 6047 (2002).Google Scholar
6. Schierholz, Ch. et al., Phys. Stat. Sol. B 233, 436 (2002).Google Scholar
7. Hackens, B. et al., Phys Rev. B 67, 121403 (2003).Google Scholar
8. Rabin, O. et al., Adv. Funct. Mater. 13, 631 (2003).Google Scholar
9. Xiao, Z. L. et al., Appl. Phys. Lett. 81, 2869 (2002).Google Scholar
10. Rabin, O. et al., in Three Dimensional Nanoengineered Assemblies, edited by Orlando, T. M., Merhari, L., Ikuta, K. and Taylor, D. P., (Mater. Res. Soc. Proc. 739, Pittsburgh, PA, 2003) H7.24.Google Scholar
11. Li, A.P. et al., J. Appl. Phys. 84, 6023 (1998).Google Scholar
12. Komori, F., Kobayashi, S.-I. and Sasaki, W., J. Phys. Soc. Japan 52, 368 (1983).Google Scholar
13. Rabin, O. et al., in preparation.Google Scholar