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Annealing Study of Erbium and Oxygen Implanted Gallium Nitride

Published online by Cambridge University Press:  10 February 2011

John T. Torvik ,
Robert J. Feuerstein ,
Chang H. Qiu ,
Moeljanto W Leksono ,
Jacques I. Pankove  and
Fereydoon Namavar
John T. Torvik
Affiliation:
Department of E&CE, University of Colorado, Boulder, CO 80309-0425.
Robert J. Feuerstein
Affiliation:
Department of E&CE, University of Colorado, Boulder, CO 80309-0425.
Chang H. Qiu
Affiliation:
Astralux, Inc., Boulder, CO 80303.
Moeljanto W Leksono
Affiliation:
Astralux, Inc., Boulder, CO 80303.
Jacques I. Pankove
Affiliation:
Department of E&CE, University of Colorado, Boulder, CO 80309-0425. Astralux, Inc., Boulder, CO 80303.
Fereydoon Namavar
Affiliation:
Spire Corporation, Bedford, MA 01730-2396.
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Abstract

A systematic study of photoluminescence (PL) of Er and O ion implanted and annealed n-type GaN grown on R-plane sapphire (A12O3) was performed. The Er implants ranged from 2 × 1013 to 1 × 1015 Er++/cm2, and the O co-implants ranged from 1014 to 1016 O+/cm2. The resulting nine different combinations of GaN:Er,O were annealed at 600 °C (4 hrs. in N2), 700 °C (1.5 hrs. in N2), 800 °C (0.75 hr. in NH3), and 900 °C (0.5 hr. in NH3) Following each annealing step, the Er3 -related PL at 1.54 μm was measured from each sample at 77K, when pumped directly with 135 mW of power at 980 nm. The three samples with the highest dose of Er (1 × 1015 Er++/ cm 2), regardless of O co-dopant dose, yielded the strongest PL peak intensity at 1.54 μm after all the anneals. The integrated PL from 1.52 to 1.58 μm was reduced by 62 % when going from 77 K to room temperature (RT).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 422: Symposium D – Rare-Earth Doped Semiconductors II , 1996 , 199
Copyright
Copyright © Materials Research Society 1996

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