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Annealing Properties of Defects in BF2 + Implanted Silicon

  • T. Kitano (a1), M. Watanabe (a1), A. Yaoita (a1), S. Oguro (a1), A. Uedono (a2), T. Moriya (a2), S. Tanigawa (a2), T. Kawano (a3), R. Suzuki (a4), T. Ohdaira (a4) and T. Mikado (a4)...

Abstract

The annealing properties of defects in BF2 + implanted silicon were investigated using positron annihilation, TEM and SIMS techniques. For the as-implanted specimens, the major species of defects was identified to be divacancies. After thermal annealing, vacancy-fluorine complexes were formed. The size of open volume in the vacancy-fluorine complexes became larger with increasing annealing temperature. Even after 1100 °C , the vacancy-fluorine complexes were still stable with the size of open volume close to V5. The depth profile of vacancy-fluorine complexes was not largely changed after re-crystallization. In this way, the fluorine atoms played an important role in forming the defects with a large size of open volume. After 1100°C annealing, the fluorine atoms piled up at two regions; the projected range of fluorine and the original amorphous/crystalline interface, where bubbles were observed by TEM. The vacancy-fluorine complexes detected by positron annihilation might be precursors of the bubbles observed by TEM.

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Annealing Properties of Defects in BF2 + Implanted Silicon

  • T. Kitano (a1), M. Watanabe (a1), A. Yaoita (a1), S. Oguro (a1), A. Uedono (a2), T. Moriya (a2), S. Tanigawa (a2), T. Kawano (a3), R. Suzuki (a4), T. Ohdaira (a4) and T. Mikado (a4)...

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