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Annealing of Irreversible Defects in Hydrogenated and Unhydrogenated Amorphous Silicon Thin Films

Published online by Cambridge University Press:  25 February 2011

G. N. Parsons ,
C. Wang  and
G. Lucovsky
G. N. Parsons
Affiliation:
Department of Physics, North Carolina State University, Raleigh, N.C. 27695-8202
C. Wang
Affiliation:
Department of Physics, North Carolina State University, Raleigh, N.C. 27695-8202
G. Lucovsky
Affiliation:
Department of Physics, North Carolina State University, Raleigh, N.C. 27695-8202
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Abstract

We have prepared unhydrogenated and hydrogenated ([H] = 14 at.%) amorphous silicon thin films using magnetron sputtering with substrate temperature, TS = 40°C. After deposition, the films were annealed at temperatures between 150 and 200°C and conductivity was measured as a function of anneal time. We find that for that for both materials, the conductivity changes non-exponentially with annealing time. The characteristic time constant for annealing at 175°C is approximately the same in unhydrogenated films (τ≈100min) as found in films containing 14 atomic % hydrogen (τ≈200min).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 775
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

Staebler, D.L. and Wronski, C.R., Appl.Phys.Lett. 31, 292 (1977).Google Scholar
Kakalios, J., Street, R.A. and Jackson, W.B., Phys Rev. Lett. 59, 1037 (1987).Google Scholar
[3] Street, R.A. and Winer, K., in “Amorphous Silicon Technology - 1989” MRS Proc. vol. 149, 131 (1989).Google Scholar
[4] Parsons, G.N., Wang, C., Williams, M.J. and Lucovsky, G., to appear in Appl.Phys.Lett., May 1990.Google Scholar
[5] Brodsky, M.H., Title, R.S., Weiser, K. and Pettit, G.D., Phys.Rev.B 1, 2632 (1970).Google Scholar
[6] Moustakas, T.D., Anderson, D.A., and Paul, W., Solid State Comm. 23, 155 (1977).Google Scholar
[7] Rudder, R.A., Cook, J.W. Jr. and Lucovsky, G., Appl.Phys.Lett. 45, 887 (1984).Google Scholar