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Annealing of High Dose Implanted GaAs with Halogen Lamps

Published online by Cambridge University Press:  22 February 2011

Y.I. Nissim ,
B. Joukoff ,
J. Sapriel  and
P. Henoc
Y.I. Nissim
Affiliation:
Centre National d'Etudes des Télécommunications, Laboratoire de Bagneux, 196 rue de Paris, 92220 Bagneux, (France).
B. Joukoff
Affiliation:
Centre National d'Etudes des Télécommunications, Laboratoire de Bagneux, 196 rue de Paris, 92220 Bagneux, (France).
J. Sapriel
Affiliation:
Centre National d'Etudes des Télécommunications, Laboratoire de Bagneux, 196 rue de Paris, 92220 Bagneux, (France).
P. Henoc
Affiliation:
Centre National d'Etudes des Télécommunications, Laboratoire de Bagneux, 196 rue de Paris, 92220 Bagneux, (France).
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Abstract

Halogen lamps are used to anneal implanted GaAs. Surface protection is obtained by mouting the substrate in a sandwiched configuration between a silicon and a quartz plate. Raman scattering measurements are carried out to follow simultaneously lattice reconstruction and surface degradation due to Arsenic loss. The evolution of the Raman spectra is compared to a T.E.M. analysis carried out on the same samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 675
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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