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Annealing of High Dose C Implanted Si by Pulsed Electron Beam

Published online by Cambridge University Press:  22 February 2011

P. Durupt ,
D. Barbier  and
A. Laugier
P. Durupt
Affiliation:
: Laboratoire de Physique Electronique 2 Université Claude Bernard - Lyon 143, Boulevard du 11 Novembre 1918, 69622 Villeurbanne Cedex (France)
D. Barbier
Affiliation:
: Laboratoire de Physique de la Matière (LA CNRS n° 358) Institut National des Sciences Appliquées de Lyon 20, Avenue Albert Einstein, 69621 Villeurbanne Cedex (France)
A. Laugier
Affiliation:
: Laboratoire de Physique de la Matière (LA CNRS n° 358) Institut National des Sciences Appliquées de Lyon 20, Avenue Albert Einstein, 69621 Villeurbanne Cedex (France)
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Abstract

High dose (1–7 1017cm−2), low energy (10–40 keV) C implanted Si samples were annealed by conventional thermal procedure and by pulsed electron beam. Characterization is performed by I.R., electron diffraction and Rutherford Backscattering. Effect of PEBA is equivalent to thermal annealing at 900°C. No C redistribution occurs and a poor recrystallization of the SiC formed during implantation is observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 747
Copyright
Copyright © Materials Research Society 1984

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References

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