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Annealing of High Dose C Implanted Si by Pulsed Electron Beam
Published online by Cambridge University Press: 22 February 2011
Abstract
High dose (1–7 1017cm−2), low energy (10–40 keV) C implanted Si samples were annealed by conventional thermal procedure and by pulsed electron beam. Characterization is performed by I.R., electron diffraction and Rutherford Backscattering. Effect of PEBA is equivalent to thermal annealing at 900°C. No C redistribution occurs and a poor recrystallization of the SiC formed during implantation is observed.
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