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Annealing effect on the nonradiative carrier recombination in AlGaAs/GaAs investigated by a piezoelectric photothermal spectroscopy

Published online by Cambridge University Press:  21 March 2011

Atsuhiko Fukuyama ,
Hiroaki Nagatomo ,
Yoshito Akashi  and
Tetsuo Ikari
Atsuhiko Fukuyama
Affiliation:
Faculty of Engineering, Miyazaki University, 1-1 Gakuen-kibanadai-nishi, Miyazaki 889-2192, Japan
Hiroaki Nagatomo
Affiliation:
Faculty of Engineering, Miyazaki University, 1-1 Gakuen-kibanadai-nishi, Miyazaki 889-2192, Japan
Yoshito Akashi
Affiliation:
Faculty of Engineering, Miyazaki University, 1-1 Gakuen-kibanadai-nishi, Miyazaki 889-2192, Japan
Tetsuo Ikari
Affiliation:
Faculty of Engineering, Miyazaki University, 1-1 Gakuen-kibanadai-nishi, Miyazaki 889-2192, Japan
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Abstract

Electron non-radiative recombination process of photoexcited carriers in as-grown and annealed n-Al0.2Ga0.8As/GaAs hetero-structure samples are investigated by using a piezoelectric photothermal spectroscopy (PPTS). The PPT signal above the band-gap energy of GaAs substrate decreased when the sample was annealed at 815°C. In the frequency dependent measurements, the deviations from 1/f linear function are clearly observed in the AlGaAs/GaAs samples. This critical deviation frequency was found to shift to the lower frequency region by annealing. Our experimental results are explained by assuming that the sample annealing generates an unknown deep level in AlGaAs epitaxial layer region and this level effectively traps the photoexcited carriers non-radiatively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H6.31.1
Copyright
Copyright © Materials Research Society 2002

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References

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