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Anisotropic Dry Etching of S1O2 on Si and its Impact on Surface and Near-Surface Properties of the Substrate.

Published online by Cambridge University Press:  28 February 2011

G. S. Oehrlein ,
G. J. Coyle ,
J. C. Tsang ,
R. M. Tromp ,
J. G. Clabes  and
Y. H. Lee
G. S. Oehrlein
Affiliation:
IBM Thomas J.Watson Research Center, Yorktown Heights, N.Y.10598
G. J. Coyle
Affiliation:
IBM Thomas J.Watson Research Center, Yorktown Heights, N.Y.10598
J. C. Tsang
Affiliation:
IBM Thomas J.Watson Research Center, Yorktown Heights, N.Y.10598
R. M. Tromp
Affiliation:
IBM Thomas J.Watson Research Center, Yorktown Heights, N.Y.10598
J. G. Clabes
Affiliation:
IBM Thomas J.Watson Research Center, Yorktown Heights, N.Y.10598
Y. H. Lee
Affiliation:
IBM Thomas J.Watson Research Center, Yorktown Heights, N.Y.10598
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Abstract

In the present paper structural and chemical changes which can occur in the surface and near-surface properties of the substrate during anisotropic dry etching of SiO2 on Si will be reviewed.Silicon specimens which had been etched in CF4/X%H2 (X≤40) have been characterized by X-ray photoelectron emission spectroscopy, He ion channeling, H profiling and Raman scattering techniques.Key results of our studies are summarized as follows: Plasma exposure of a Si surface leads to the deposition of a thin (≤50Å thick) C,F-film.A Si-carbide containing Si region is formed during RIE which is localized near the fluorocarbon-film/Si interface.The near-surface region (∼30–50Å) of the Si substrate is also heavily disordered as found by ion channeling and Raman scattering.A modified, less damaged Si region has been found in the case of hydrogen-based etching gases, which extends from about 30–50Å from the surface to a depth in extent of 250Å and contains a high concentration (∼ 5 at.%) of H as shown by hydrogen profiling techniques.From the observation of Si-H and Si-H2 vibrational modes by Raman scattering it has been shown that some of the H is bonded to the Si lattice.

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Articles
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MRS Online Proceedings Library (OPL) , Volume 68: Symposium C – Plasma Processing , 1986 , 367
Copyright
Copyright © Materials Research Society 1986

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References

1. See Coburn, e.g.J.W. and Winters, H.F., J.Vac.Sci.Technol. 16, 391 (1979); D.L.Flamm and V.M.Donnelly, Plasma Chemistry and Plasma Processing 1, 317 (1981).CrossRefGoogle Scholar
2. Coburn, J.W., “Plasma Etching and Reactive Ion Etching”, American Vacuum Society Monograph Series, New York (1982).Google Scholar
3. Yamamoto, Y., Shinada, K., Itoh, T. and Yada, K., Japan.J.Appl.Phys. 13, 551 (1974).Google Scholar
4. Sachse, G.W., Miller, W.E. and Gross, C., Solid State Electronics 18, 431 (1975).Google Scholar
5. Deppe, H.R., Hasler, B. and Hopfner, J., Solid State Electronics 20, 51 (1977).CrossRefGoogle Scholar
6. For reviews see: Eprath, L.M. and DiMaria, D.J., Solid State Technology, April 1981; S.W. Pang, Solid State Technology, April 1984; S.J. Fonash, Solid State Technology, April 1985.Google Scholar
7. See e.g., Corbett, J.W., “Electron Radiation Damage in Semiconductors and Metals”, Solid State Physics, eds.Seitz, F. and Turnbull, D., (Academic Press, New York, 1966), Suppl.7.Google Scholar
8. Fonash, S.J., Ashok, S., and Singh, R., Appl.Phys.Lett. 39, 423 (1981); S.Ashok, T.P.Chow, and B.J.Baliga, Appl.Phys.Lett., 42, 687 (1983); R.Singh, S.J.Fonash, P.J.Caplan, and E.H.Pointdexter, Appl.Phys.Lett., 43, 502 (1983); R.Singh, S.J.Fonash, S.Ashok, P.J.Caplan, J.Shappirio, M.Hage-Ali, and J.Ponpon, J.Vac.Sci.Technol.Al, 334 (1983); X.C.Mu and S.J.Fonash, IEEE Elect.Dev.Lett.EDL-6, 410 (1985).CrossRefGoogle Scholar
9. Chow, T.P., Ashok, S., Baliga, B.J., and Katz, W., in “Proccedings of the Fourth Symposium on Plasma Processing”, eds.Mathad, G.S., Schwartz, G.C., and Smolinsky, G., (Electrochem.Soc., Pennington, 1983), pp.101.Google Scholar
10. Matsumoto, H. and Sugano, T., J.Electrochem.Soc. 129, 2823 (1982); T. Matsumoto and T. Sugano, Jap.J.Appl.Phys. 22, 963 (1983).CrossRefGoogle Scholar
11. Watanabe, M.O., Taguchi, M., Kanzaki, K., and Zohta, Y., Jap.J.Appl.Phys. 22, 281 (1983).CrossRefGoogle Scholar
12. Ransom, C.M., Chappell, T.I., Ephrath, L.M., and Bennett, R.S., Electrochem.Soc.Ext.Abstr.82–1, (1982); C.M.Ransom, T.I.Chappell, A.Sugarman, S.R.Mader, and R.W.Young, Electrochem.Soc.Ext.Abstr, 83–1, 282 (1983).Google Scholar
13. Ransom, C.M., Chappell, T.I., Mader, S.R., Sugerman, A., and Young, R.W., op.cit.Ref.9, pp.93.Google Scholar
14. Chang, J.S., op.cit.Ref.9, pp.114.Google Scholar
15. Ephrath, L.M. and Bennett, R.S., J.Electrochem.Soc. 129, 1822 (1982); N.Lifshitz, J.Electrochem.Soc.., 130, 1549 (1983); S.W.Pang, D.D.Rathman, D.J.Silversmith, R.W.Mountain, and P.D.DeGraff, J.Appl.Phys.54, 3272 (1983); S.W.Pang, C.M.Horwitz, D.D.Rathman, S.M.Cabral, D.J.Silversmith, and R.W.Mountain, op.cit.Ref.9, pp.84.CrossRefGoogle Scholar
16. Frieser, R.G., Montillo, F.J., Zingerman, N.B., Chu, W.K., and Mader, S.R., J.Electrochem.Soc. 130, 2237 (1983).Google Scholar
17. Ephrath, L.M., and Petrillo, E.J., J.Electrochem.Soc. 129, 2282 (1982).Google Scholar
18. Lehmann, H.W., and Widmer, R., Appl.Phys.Lett. 32, 163 (1978).Google Scholar
19. Oehrlein, G.S., Tromp, R.M., Lee, Y.H., and Petrillo, E.J., Appl.Phys.Lett. 45, 420 (1984).Google Scholar
20. Oehrlein, G.S., Tromp, R.M., Tsang, J.C., Lee, Y.H., and Petrillo, E.J., J.Electrochem.Soc. 132, 1441 (1985).CrossRefGoogle Scholar
21. Tsang, J.C., Oehrlein, G.S., Haller, I., and Custer, J.S., Appl.Phys.Lett. 46, 589 (1985).CrossRefGoogle Scholar
22. Coyle, G.J., and Oehrlein, G.S., Appl.Phys.Lett. 47, 604 (1985).CrossRefGoogle Scholar
23. Kawamoto, Y., and Kure, T., Electrochem.Soc.Ext.Abstr. 83–1, 276 (1983); T.Hosoya, Y.Ozaki, and K.Hirata, J.Electrochem.Soc.132, 2436 (1985); see also: S.P.Murarka, and C.J.Mogab, J.Electronic Materials 8, 763 (1979).Google Scholar
24. Chu, W.-K., Mayer, J.W., and Nicolet, M.-A., “Backscattering Spectrometry”, Academic Press, New York (1978); L.C.Feldman, J.W.Mayer, and S.T.Picraux, “Materials Analysis by Ion Channeling”, Academic Press, New York (1982).Google Scholar
25. Oehrlein, G.S., J.Appl.Phys.(in press, 1986).Google Scholar
26. Csepregi, L., Mayer, J.W., and Sigmon, T.W., Appl.Phys.Lett., 29, 92 (1976); S.S.Lau, J.W.Mayer, and W.F.Tseng in “Handbook of Semiconductors”, S.P.Keller, ed., Vol.3, Chap.7 (North Holland, New York, 1980).CrossRefGoogle Scholar
27. Roop, B., Joyce, S., Schultz, J.C., Shinn, N.D., and Steinfeld, J.I., Appl.Phys.Lett., 46, 1187 (1985).Google Scholar
28. Rice, D.W. and O'Kane, D.F., J.Electrochem.Soc. 123, 1308 (1976); D.T.Clark and S.Shuttleworth, J.Polymer Sci.: Polymer Chem.Ed.17, 1317 (1979); A.Dilks and E.Kay, Macromolecules 14, 855 (1981).CrossRefGoogle Scholar
29. McFeely, F.R., Morar, J.F., Shinn, N.D., Landgren, G., and Himpsel, F.J., Phys.Rev.B 30, 764 (1984).Google Scholar
30. Lanford, W.A., Trautvetter, H.P., Ziegler, J.F., and Keller, J., Appl.Phys.Lett. 28, 566 (1976).CrossRefGoogle Scholar
31. Ransom, C.M., Chicokta, S.M., Spirito, P., Oehrlein, G.S., Sedgwick, T.O., and Cohen, S.A., in “Proceedings of the Fifth Symposium on Plasma Processing”, edited by Mathad, G.S., Schwartz, G.C. and Smolinsky, G. (The Electrochem.Soc., Pennington, 1985), pp.579.Google Scholar
32. Spirito, P., Ransom, C.M., and Oehrlein, G.S., Solid State Electronics (in press, 1986).Google Scholar
33. Ransom, C.M. (unpublished results) and “Tegal Eleventh Annual Plasma Seminar”, (Tegal Corp., Novato, 1985), pp.31.Google Scholar
34. Kawamoto, Y., and Hashimoto, N., “Proceed.Second Symposium Dry Processes”, (Inst.Elect.Eng.Japan, 1980), pp.63.Google Scholar
35. Ozaki, Y., and Ikuta, K., Jap.J.Appl.Phys. 23, 1526 (1984).CrossRefGoogle Scholar
36. Oehrlein, G.S., Clabes, J.G., and Spirito, P., J.Electrochem.Soc.(in press, 1986).Google Scholar
37. Oehrlein, G.S., Ransom, C.M., Chakravarti, S.N., and Lee, Y.H., Appl.Phys.Lett. 46, 686 (1985).Google Scholar
38. Mu, X.C., Fonash, S.J., Oehrlein, G.S., Chakravarti, S.N., Parks, C., and Keller, J., J.Appl.Phys.(in press, 1986).Google Scholar
39. Horiike, Y., in “VLSI Electronics Microstructure Science”, Vol.8, Plasma Processing for VLSI, eds.Einspruch, N.G. and Brown, D.M., (Academic Press, New York, 1984), pp.447.Google Scholar
40. Hirobe, K., and Azuma, H., J.Electrochem.Soc. 132, 938 (1985).Google Scholar