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Anisotropic Dry Etching of Aluminum Films Deposited on Topographic Steps

  • Jer-Shen Maa (a1) and Bernard Halon (a1)

Abstract

During the etching of aluminum film, if the film is deposited on a surface which contains sharp topological steps, and if the etching proceeds mainly along the vertical direction, it becomes very difficult to remove the remaining residue.Experimental results are discussed in terms of effects of native oxide film and polymer film formation.A simple model is proposed to reveal the residue formation process and to explain the problem encountered during the removal of the etched residue.

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2. Okazaki, S., Chow, T.P., and Steckl, A.J., IEEE Transactions on Electron Devices, ED–28, 1364 (1981).
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