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Analysis of Wurtzite GaN/AlGaN Quantum Well Lasers from First-Principles Calculations

Published online by Cambridge University Press:  21 February 2011

T. Uenoyama  and
M. Suzuki
T. Uenoyama
Affiliation:
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd., 3-4 Hikaridai, Seika-cho Souraku-gun Kyoto 619-02, Japan, takeshi@crl.mei.co.jp
M. Suzuki
Affiliation:
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd., 3-4 Hikaridai, Seika-cho Souraku-gun Kyoto 619-02, Japan, takeshi@crl.mei.co.jp
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Abstract

Optical gain of wurtzite GaN/AlGaN quantum wells has been studied from a first-principles calculation using the k • p method. Most of the parameters in the k • p method were determined by fitting the band structures by the first-principles calculation. Owing to the small spin-orbit splitting energies of the wurtzite GaN and AIN, the optical gain has been calculated using the 6×6 Hamiltonian for the valence band. It is found that the large hole effective masses and the small spin-orbit splitting cause the higher threshold current density of wurtzite GaN/AlGaN quantum well lasers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 925
Copyright
Copyright © Materials Research Society 1996

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References

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