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Analysis of the Bias Dependent Spectral Response of a-SiC:H p-i-n Photodiode

Published online by Cambridge University Press:  01 February 2011

P. Louro ,
A. Fantoni ,
Yu. Vygranenko ,
M. Fernandes  and
M. Vieira
P. Louro
Affiliation:
Electronics Telecommunications and Computer Dept., ISEL, Lisbon, Portugal.
A. Fantoni
Affiliation:
Electronics Telecommunications and Computer Dept., ISEL, Lisbon, Portugal.
Yu. Vygranenko
Affiliation:
Electronics Telecommunications and Computer Dept., ISEL, Lisbon, Portugal.
M. Fernandes
Affiliation:
Electronics Telecommunications and Computer Dept., ISEL, Lisbon, Portugal.
M. Vieira
Affiliation:
Electronics Telecommunications and Computer Dept., ISEL, Lisbon, Portugal.
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Abstract

The bias voltage dependent spectral response (with and without steady state bias light) and the current voltage dependence has been simulated and compared to experimentally obtained values. Results show that in the heterostructures the bias voltage influences differently the field and the diffusion part of the photocurrent. The interchange between primary and secondary photocurrent (i. e. between generator and load device operation) is explained by the interaction of the field and the diffusion components of the photocurrent. A field reversal that depends on the light bias conditions (wavelength and intensity) explains the photocurrent reversal. The field reversal leads to the collapse of the diode regime (primary photocurrent) launches surface recombination at the p-i and i-n interfaces which is responsible for a double-injection regime (secondary photocurrent). Considerations about conduction band offsets, electrical field profiles and inversion layers will be taken into account to explain the optical and voltage bias dependence of the spectral response.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A7.3
Copyright
Copyright © Materials Research Society 2002

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