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Analysis of strain in sub-grains with variable misorientation in GaN epilayers by digital processing of HRTEM images

  • S. Kret (a1), P. Ruterana (a2), J. Chen (a2) and G. Nouet (a2)

Abstract

In epitaxial GaN layers on (0001) sapphire, the distance between edge dislocations in sub-grain boundaries is variable. The strain state in such sub-grains is quantitatively measured by processing of HRTEM images. The dislocation core distribution maps and in plane Burgers vectors components are derived from experimental strain tensor by applying the continuum dislocation theorem. For image simulationsthe atomic models of edge dislocations are calculated using a modified Stillinger-Weber potential. It is shown that the strain field extracted from simulated images matches that from experimental ones. The corresponding dislocation density peaks are larger and more splitted than those from simulated images.

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[1] Hÿtch, M.J., Snoeck, E. and Killaas, R., Ultramicroscopy 74, 131, 1998.
[2] Kret, S., Dluzewski, P., Dluzewski, P., Sobczak, E., J. Phys.: Condens. Matter 12, 10313, 2000
[3] Optimas 6.5 User Guide and Technical Reference 1999, Media Cybernettics.
[4] Potin, V., Ruterana, P., Nouet, G., Pond, R.C., Morkoç, H., Phys. Rev.B 61, 5587, 2000
[5] Aichoune, N., Ruterana, P., Hairie, A., Nouet, G., Paumier, E., Comp. Mater. Sci. 17, 380 2000
[6] Stadelmann, P., Ultamicroscopy 21 131, (1987)

Analysis of strain in sub-grains with variable misorientation in GaN epilayers by digital processing of HRTEM images

  • S. Kret (a1), P. Ruterana (a2), J. Chen (a2) and G. Nouet (a2)

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