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Analysis of Residual Stress in Polycrystalline Silver Thin Films by X-Ray Diffraction

  • T. L. Alford (a1), Yuxiao Zeng (a1), Y. L. Zou (a1), F. Deng (a2), S. S. Lau (a2), T. Laursen (a3) and B. Manfred Ullrich (a3)...

Abstract

The stress state of evaporated Ag films prepared on Ti underlayers before and after encapsulation process has been studied by x-ray diffraction using a “sin2ψ” technique. A low tensile stress of approximately 61 MPa was measured in the as-deposited Ag films. The stress was caused by nonequilibrium growth during film deposition and resulted in a lattice tension state in the film plane and a lattice compression state along the film normal. Thermal mismatch stress was produced by the encapsulation process at 600 °C, but most of this stress relaxed during the cooling stage, and a residual tensile stress of ∼ 320 MPa in the film plane was determined.

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Analysis of Residual Stress in Polycrystalline Silver Thin Films by X-Ray Diffraction

  • T. L. Alford (a1), Yuxiao Zeng (a1), Y. L. Zou (a1), F. Deng (a2), S. S. Lau (a2), T. Laursen (a3) and B. Manfred Ullrich (a3)...

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