Hostname: page-component-8448b6f56d-dnltx Total loading time: 0 Render date: 2024-04-24T08:20:53.755Z Has data issue: false hasContentIssue false
  • English
  • Français

Analysis of Defects in Heavily-Doped MBE-GaAs

Published online by Cambridge University Press:  15 February 2011

C.B. Carter ,
D.M. Desimone ,
H.T. Griem  and
C.E.C. Wood
C.B. Carter
Affiliation:
Department of Materials Science and Engineering, Bard Hall And Department of Electrical Engineering And NRRFSS, Phillips Hall, Cornell University, Ithaca, New York 14853
D.M. Desimone
Affiliation:
Department of Materials Science and Engineering, Bard Hall And Department of Electrical Engineering And NRRFSS, Phillips Hall, Cornell University, Ithaca, New York 14853
C.E.C. Wood
Affiliation:
Department of Materials Science and Engineering, Bard Hall And Department of Electrical Engineering And NRRFSS, Phillips Hall, Cornell University, Ithaca, New York 14853
Get access

Abstract

GaAs Has Been Grown By Molecular-Beam Epitaxy (MBE) With Large Concentrations (∼1018CM−2) Of Sn, Si, Ge, And Mn As Dopants. The Heavily-Doped N-Type Material Has Been Found To Contain Regions Of A Very High Dislocation Density. An Analysis Of The Less Complex Defect Areas Shows That The Dislocations Originate In The MBE-Grown Layer. These Observations And Others On More Complex Defect Clusters Are Compared With Recent Studies Of Defects In Material Grown By Liquid Phase Epitaxy (LPE). The More Heavily Doped P-Type Material Contains Discs Of Mn-Rich Material At The Surface Of The MBEgrown Epilayer. Both The Structure And Composition Of These Regions Have Been Examined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 271
Copyright
Copyright © Materials Research Society 1982

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Wood, C.E.C., Phys. Thin Films 11, 35 (1980).Google Scholar
2. Harris, J. J., Joyce, B. A., Gowers, J. P., and Neave, J. H., Appl. Phys. A28, 63 (1982).Google Scholar
3. DeSimone, D. M., Ph.D. Thesis, Cornell University (1981).Google Scholar
4. Kotani, T., Ueda, O., Akita, K., Nishitani, Y., Kusunoki, T., and Ryuzan, O., J. Crystal Growth 38, 85 (1977).Google Scholar
5. Wagner, W. R., J. Electrochem. Soc. 128, 2641 (1981).Google Scholar
6. Mahajan, S. and Chin, A. K., J. Crystal Growth 54, 138 (1981).Google Scholar
7. Augustus, P. D. and Stirland, D. J., J. Electrochem. Soc. 129, 614 (1982).Google Scholar
8. Lum, W. Y. and Clawson, A. R., J. Appl. Phys. 50, 5296 (1979).Google Scholar