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Analysis of Cu-Line EM Failure Kinetics Using Mass Transport TCAD Simulations

  • Mankoo Lee (a1), Xuena Zhang (a1) and Dipankar Pramanik (a1)

Abstract

We describe a mass transport TCAD simulation by using a Sentaurus S-Interconnect tool [1] that models reported electro-migration (EM) behaviors: EM induced resistance (R) change, line length (L) effect, and temperature (T) dependency on L and current density (j) products. We performed trend and sensitivity analyses for key physical EM model parameters: Cu-void formation, a sudden jump in line R associated with void growth, and Cu-vacancy (Cv) and void (Cvoid) profiles. In this manner, we develop a new methodology for accurately determining the EM lifetime by identifying an “EM-aware” region to define the L dependence of Cu-lines under high current stress. This includes electron flow dependency to explain line and via depletion effects for void formations under various stress conditions. We report a non-linearity in the L dependence on the jL product and a slight temperature dependence on the Blech Threshold (jL)c.

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1. Synopsys, Inc., Sentaurus Interconnect User Guide, Version G-2012.06 , 2012.
2. Ingerly, D., et al. , IEEE International Interconnect Tech. Conference, 2012, pp. 12.2.13.
3. Rosenberg, R., et al. , Journal of Applied Physics, vol. 42, no.13, 1971, pp. 5671–9.
4. Filippi, R. G., et al. , IEEE International Reliability Physics Symposium, 2009, pp. 444–51.

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