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Analogue Memory Effects in Metal/ a-Si:H /Metal Thin Film Structures

Published online by Cambridge University Press:  01 January 1993

A.J. Snell ,
J. Hajto ,
M.J. Rose ,
I.S. Osborne ,
A. Holmes ,
A.E. Owen  and
R.A.G. Gibson
A.J. Snell
Affiliation:
Department of Electrical Engineering, University of Edinburgh, Edinburgh EH9 3JL, U.K.
J. Hajto
Affiliation:
Department of Electrical Engineering, University of Edinburgh, Edinburgh EH9 3JL, U.K.
M.J. Rose
Affiliation:
Department of A.P.E.M.E., University of Dundee, Dundee DDI 4HN, U.K.
I.S. Osborne
Affiliation:
Department of A.P.E.M.E., University of Dundee, Dundee DDI 4HN, U.K.
A. Holmes
Affiliation:
Department of Electrical Engineering, University of Edinburgh, Edinburgh EH9 3JL, U.K.
A.E. Owen
Affiliation:
Department of Electrical Engineering, University of Edinburgh, Edinburgh EH9 3JL, U.K.
R.A.G. Gibson
Affiliation:
Department of A.P.E.M.E., University of Dundee, Dundee DDI 4HN, U.K.
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Abstract

The ac conductivities of non-volatile analogue memory states are measured in electro-formed Cr/p+/V amorphous silicon structures for a broad frequency range (from 0.1 Hz to 32 MHz). The results suggest that the memory action is associated with electronic processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 1017
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1 Rose, M.J., Hajto, J., LeComber, P.G., Gage, S.M., Choi, W.K., Snell, A.J. and Owen, A.E., J. Non Cryst. Solids, 115 168 (1989)Google Scholar
2 Hajto, J., Rose, M.J., Snell, A.J., LeComber, P.G. and Owen, A.E., MRS Symp. Proc., 192 405 (1990)Google Scholar
3 Hajto, J., Owen, A.E., Snell, A.J., LeComber, P.G. and Rose, M.J., Phil. Mag. B, 63 349–369 (1991)Google Scholar