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An XPS Study of Silicon Oxynitride Rapid Thermally Grown in Nitric Oxide

  • W. H. Lai (a1), M. F. Li (a1), J. S. Pan (a2), R. Liu (a3), L. Chan (a4) and T. C. Chua (a5)...

Abstract

Earlier growth studies on the rapid thermal oxidation of silicon in NO (RTNO) were not sufficiently comprehensive and were limited by temperature measurement uncertainty and thermal non-uniformity across the wafer. Using a state-of-the-art rapid thermal processing (RTP) system, the RTNO growth characteristics at 100 and 760 Torr, from 900 to 1200°C and from 0 to 480 s were investigated. It was found that the initial growth rate anomalously decreasedwith temperature and pressure. These anomalies were correlated to the evolution of the XPS N 1s spectrum of the RTNO film with oxidation time, temperature and pressure.

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1. Massoud, H. Z., in Rapid Thermal Processing, edited by Fair, R. B. (Academic Press, San Diego, 1993), p. 45 and references therein.
2. Borisenko, V. E. and Hesketh, P. J., Rapid Thermal Processing of Semiconductors (Plenum Press, New York, 1997), p. 193 and references therein.
3. Harrison, H. B., Misiura, A., Dimitrijev, S., Sweatman, D., Yao, Z., and Yeow, Y. -T., Mat. Res. Soc. Symp. Proc., 342, 151 (1994).
4. Harrison, H. B., Yao, Z.-Q., Dimitrijev, S., Sweatman, D., and Yeow, Y.-T, Mat. Res. Soc. Symp. Proc., 387, 233 (1995).
5. Yao, Z-Q, J. Appl. Phys., 78, 2906 (1995).
6. Lai, W. H., Li, M. F., Chan, L., and Chua, T. C., J. Vac. Sci. Technol. B, 17 2226 (1999).
7. Shallenberger, J. R., Cole, D. A., and Novak, S. W., J. Vac. Sci. Technol. A, 17, 1086 (1999).
8. Hedge, R. I., Maiti, B., and Tobin, P. J., J. Electrochem. Soc., 144 1081 (1997).
9. Gosset, L. G., Ganem, J.-J., Trimaille, I., Rigo, S., Rochet, F., Dufour, G., Jolly, F., Stedile, F. C., Baumvol, I. J. R., Nucl. Instr. and Meth. in Phys. Res. B, 136– 138, 521 (1998).
10. Sagnes, I., Laviale, D., Regache, M., Glowacki, F., Deutschmann, L., Blanchard, B., and Martin, F., Mat. Res. Soc. Symp. Proc., 429, 251 (1996).

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An XPS Study of Silicon Oxynitride Rapid Thermally Grown in Nitric Oxide

  • W. H. Lai (a1), M. F. Li (a1), J. S. Pan (a2), R. Liu (a3), L. Chan (a4) and T. C. Chua (a5)...

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