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An Investigation of a-Si:H Thin Film Transistors by A Comparison of Transient Measurements and Numerical Simulations.
Published online by Cambridge University Press: 21 February 2011
Abstract
Transient measurements of the source-drain current ISD of amorphous silicon (a-Si:H) thin film transistors are compared with the results of two dimensional simulations. In particular, we have investigated the effect of different amorphous silicon layer thicknesses on the transient response. It is found that the dynamic response of a transistor with 0.4 μm a-Si:H is significantly slower than that of a device with only 0.06 μm of a-Si:H.
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- Copyright © Materials Research Society 1992
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