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An Important Failure Mechanism in MOCVD (Ba,Sr)TiO3 thin Films: Resistance Degradation

  • C. Basceri (a1), S. E. Lash (a1), C. B. Parker (a1), S. K. Streiffer (a1), A. I. Kingon (a1), M. Grossmann (a2), S. Hoffmann (a2), M. Schumacher (a2), R. Waser (a2), S. Bilodeau (a3), R. Carlt (a3), P. C. Van Buskirk (a3) and S. R. Summerfelt (a4)...

Abstract

We have investigated the intrinsic resistance degradation behavior of fiber-textured MOCVD (Ba,Sr)TiO3 thin films appropriate for use in advanced DRAMs and integrated decoupling capacitors, as a function of applied voltage polarity, thickness, temperature, and dc bias/field. The results suggest that there is a significant stoichiometry effect on the measured resistance degradation lifetimes. The measured degradation lifetime increases as the Ti content is increased from 51.0 to 52.0 at%Ti, and then decreases with higher at%Ti. Predicted resistance degradation lifetimes obtained from both temperature and voltage extrapolations to DRAM operating conditions of 85°C and 1.6 V exceed the current benchmark of 10 years for all of the films studied.

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An Important Failure Mechanism in MOCVD (Ba,Sr)TiO3 thin Films: Resistance Degradation

  • C. Basceri (a1), S. E. Lash (a1), C. B. Parker (a1), S. K. Streiffer (a1), A. I. Kingon (a1), M. Grossmann (a2), S. Hoffmann (a2), M. Schumacher (a2), R. Waser (a2), S. Bilodeau (a3), R. Carlt (a3), P. C. Van Buskirk (a3) and S. R. Summerfelt (a4)...

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