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An Examination of the Mechanisms of Si Diffusion in GaAs

Published online by Cambridge University Press:  25 February 2011

Shaofeng Yu ,
Ulrich M. Gosele  and
Teh Y. Tan
Shaofeng Yu
Affiliation:
School of Engineering, Duke University Durham, NC 27706
Ulrich M. Gosele
Affiliation:
School of Engineering, Duke University Durham, NC 27706
Teh Y. Tan
Affiliation:
School of Engineering, Duke University Durham, NC 27706
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Abstract

An examination of the three available quantitative models of Si diffusion in GaAs has led to the conclusion that the Fermi-level effect mechanism plays the most essential role. In some experimental results a point defect concentration transient is involved which should be incoorporated in future models.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 671
Copyright
Copyright © Materials Research Society 1990

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