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An Examination of the Mechanisms of Si Diffusion in GaAs
Published online by Cambridge University Press: 25 February 2011
Abstract
An examination of the three available quantitative models of Si diffusion in GaAs has led to the conclusion that the Fermi-level effect mechanism plays the most essential role. In some experimental results a point defect concentration transient is involved which should be incoorporated in future models.
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- Copyright © Materials Research Society 1990
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