Hostname: page-component-848d4c4894-ndmmz Total loading time: 0 Render date: 2024-05-09T03:52:25.045Z Has data issue: false hasContentIssue false
  • English
  • Français

An Electron Paramagnetic Resonance Investigation of Iron-Indium Pairs in Silicon

Published online by Cambridge University Press:  25 February 2011

P. Emanuelsson ,
W. Gehlhoff ,
P. Omling  and
H. G. Grimmeiss
P. Emanuelsson
Affiliation:
Department of Solid State Physics, University of Lund, Box 118, S-221 00 Lund, Sweden
W. Gehlhoff
Affiliation:
Academy of Sciences of the GDR, Centre for Scientific Instruments, Rudower Chaussee 6, Berlin 1199, GDR
P. Omling
Affiliation:
Department of Solid State Physics, University of Lund, Box 118, S-221 00 Lund, Sweden
H. G. Grimmeiss
Affiliation:
Department of Solid State Physics, University of Lund, Box 118, S-221 00 Lund, Sweden
Get access

Abstract

Three different Electron Paramagnetic Resonance (EPR) signals, one trigonal and two orthorhombic, which originates from iron-indium pairs in silicon are investigated. It is shown that the two orthorhombic spectra can be explained as transitions within the two doublets of a S=3/2 system with a large zero-field splitting. The temperature dependence of-the intensities reveals that the newly discovered spectrum corresponds to the lower doublet and that the zero-field splitting is 9.8 ± 2.0 cm-1.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 307
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Chantre, A. and Bois, D., Phys. Rev. B 31, 7979 (1985).Google Scholar
2 Ludwig, G. W. and Woodbury, H. H., Solid State Phys. 13, 223 (1962) .Google Scholar
3 van Kooten, J. J., Weller, G. A. and Ammerlaan, C. A. J., Phys. Rev. B 30, 4564 (1984) .Google Scholar
4 Gehlhoff, W., Irmscher, K. and Kreissl, J., Proc. 2nd Int. autumn meeting, Garzau 1987, 262 (1987).Google Scholar
5 Omling, P., Emanuelsson, P., Gehlhoff, W. and Grimmeiss, H. G., Solid State Commun. 70, 807 (1989) .Google Scholar
6 Gehlhoff, W., Emanuelsson, P., Omling, P. and Grimmeiss, H. G., to be published in Phys. Rev. B.Google Scholar
7 Chantre, A. and Kimerling, L. C., in Defects in Semiconductors. Material Science Forum Vol. 10–12. edited by von Bardeleben, H. J. (Trans Tech Publ. Ltd, Switzerland, 1986), p. 387.Google Scholar