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An Electrical Characterization of Sol Films Using Devices Formed by Oxygen Implant and Rapid Thermal Processing

Published online by Cambridge University Press:  28 February 2011

Jim D. Whitfield ,
Marie E. Burnham ,
Charles J. Varker  and
Syd.R. Wilson
Jim D. Whitfield
Affiliation:
SRDL, Motorola Inc., 5005 E. McDowell, Phoenix AZ.
Marie E. Burnham
Affiliation:
SRDL, Motorola Inc., 5005 E. McDowell, Phoenix AZ.
Charles J. Varker
Affiliation:
SRDL, Motorola Inc., 5005 E. McDowell, Phoenix AZ.
Syd.R. Wilson
Affiliation:
SRDL, Motorola Inc., 5005 E. McDowell, Phoenix AZ.
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Extract

The advantages of Silicon-on-Insulator (SO) devices over bulk Silicon devices are well known (speed, radiation hardened, packing density, latch up free CMOS,). In recent years, much effort has been made to form a thin, buried insulating layer just below the active device region. Several approaches are being developed to fabricate such a buried insulating layer. One viable approach is by high dose, high energy oxygen implantation directly into the silicon wafer surface (1-3). With proper implant and annealing conditions, a thin stoichiometric buried oxide with a good crystalline quality silicon overlayer can be formed on which an epitaxial layer can be grown and functional devices and circuits built. As SO1 circuits become market viable, mass production tools and techniques are being developed and evaluated. Of particular interest here is the evaluation of high current oxygen implantation with rapid thermal processing on the electrical characteristics of the oxide-silicon interfaces, the silicon overlayer and the thermally grown oxide on the top surface using measurements on gated diodes and guarded capacitors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 241
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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