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An Atomistic Study of Ti Segregation to Lamellar Interfaces in Ti-RICH TiAl

Published online by Cambridge University Press:  10 February 2011

K. Ito  and
V. Vitek
K. Ito
Affiliation:
Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania, 19104–6272.
V. Vitek
Affiliation:
Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania, 19104–6272.
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Abstract

In this paper we analyze the effect of the surplus of titanium in the bulk on γ/γ interfaces. Monte Carlo calculations using a central force many-body potential suggest that in Ti rich alloys titanium segregates to the 120° rotational fault and the pseudotwin. This leads to the formation of a thin region of the DO19 Ti3Al at these interfaces. While titanium does not segregate to the ordered twin, it does to the ordered twin with the APB. But in this case the interface dissociates into the 120° rotational fault and the pseudotwin. The calculations further show that there are two types of atomic sites at the interfaces. One is the same as in the ideal L10 the other, to which the segregation takes place, is specific for interfaces parallel to {111} planes. The specific distribution of the sites favored for segregation is the reason why segregation leads to the formation of a narrow region of the DO19 Ti3Al in the 120° rotational fault and the pseudotwin.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 492: Symposium S – Microscopic Simulation of Interfacial Phenomena in Solids… , 1997 , 255
Copyright
Copyright © Materials Research Society 1998

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References

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