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An Asymmetric Dual Gate Poly-Si TFTs for Improving Hot Carrier Stress Stability and Kink Effect Suppression

  • Joong Hyun Park (a1), Woo Jin Nam (a2), Jae Hoon Lee (a3) and Min Koo Han (a4)

Abstract

An asymmetric dual gate poly-Si thin film transistors (TFTs), which is consist a long-gate TFT and a short-gate TFT, were fabricated in order to suppress the kink current and increase the reliability. The long-gate TFT operates in a linear regime and limits the total current flow by its current operation region. The asymmetric dual-gate does not exhibit from the kink current in a high drain bias due to the distribution of lateral electric field. The asymmetric dual-gate structure improves kink-free characteristics compared with conventional single and dual-gate TFTs. The hot-carrier stress reliability is successfully improved due to kink current suppression.

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Keywords

An Asymmetric Dual Gate Poly-Si TFTs for Improving Hot Carrier Stress Stability and Kink Effect Suppression

  • Joong Hyun Park (a1), Woo Jin Nam (a2), Jae Hoon Lee (a3) and Min Koo Han (a4)

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