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Amorphous Silicon-Germanium Alloy Solar Cells with Profiled Band Gaps

Published online by Cambridge University Press:  25 February 2011

J. Yang ,
R. Ross ,
T. Glatfelter ,
R. Mohr  and
S. Guha
J. Yang
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, MI 48084
R. Ross
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, MI 48084
T. Glatfelter
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, MI 48084
R. Mohr
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, MI 48084
S. Guha
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, MI 48084
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Abstract

We have studied the spectral dependence of various types of amorphous silicon-germanium (a-Si:Ge) alloy p-i-n solar cells in which the band gap of the intrinsic (i) layer is profiled between 1.4 and 1.7 eV. It is observed that the cell performance depends critically on the shape of the profile, especially for red-light illumination where the device output is found to vary by more than a factor of two. We have correlated the experimental data with optical absorption and dynamic internal collection efficiency (DICE) measurements. We have also fabricated two-cell tandem and three-cell triple devices by incorporating a-Si:Ge alloy with multiple band-gap profiles in the bottom cell and achieved 13.0% and 13.7% conversion efficiencies, respectively. These are the highest efficiency amorphous silicon-based alloy solar cells reported to date.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 435
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Guha, S., Yang, J., Pawlikiewicz, A., Glatfelter, T., Ross, R., and Ovshinsky, S.R., Proc. 20th IEEE PV Specialists Conference, Las Vegas, 1988 (in press).Google Scholar
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