Hostname: page-component-8448b6f56d-sxzjt Total loading time: 0 Render date: 2024-04-20T00:50:48.977Z Has data issue: false hasContentIssue false
  • English
  • Français

Amorphous Silicon Ultra Thin Base Bipolar Phototransistor with High Performance (β=12, τx ≤30μs)

Published online by Cambridge University Press:  26 February 2011

C. Y. Chang ,
B. S. Wu ,
Y. K. Fang  and
R. H. Lee
C. Y. Chang
Affiliation:
Semiconductor and System Laboratories, Institute of Electrical and Computer Engineering, National Cheng Kung University, Tainan, Taiwan, R.O.C.
B. S. Wu
Affiliation:
Semiconductor and System Laboratories, Institute of Electrical and Computer Engineering, National Cheng Kung University, Tainan, Taiwan, R.O.C.
Y. K. Fang
Affiliation:
Semiconductor and System Laboratories, Institute of Electrical and Computer Engineering, National Cheng Kung University, Tainan, Taiwan, R.O.C.
R. H. Lee
Affiliation:
Semiconductor and System Laboratories, Institute of Electrical and Computer Engineering, National Cheng Kung University, Tainan, Taiwan, R.O.C.
Get access

Abstract

An n+ /i/p /i/n amorphous silicon bipolar transistor has been successfully fabricated with a current gain of 12 and a response speed of 30 yS This new structure of bipolar transistor has a very thin base (200Å), therefore, high gain and high speed is obtainable. This device has a very promising applications as a flat panel display transistor and a phototransistor in photosensing element/array and photo coupler. Electrical and optical characteristics have been extensively investigated. Theoretical model and experimental results are plausibly in good agreement.

Variation from the fundamental structure is also been developed, such as the Schottky emitter Al/i/p /i/n bipolar transistor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 781
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Anderson, D.A. and Spear, W.E., Philos. Mag. 35, 1(1977).Google Scholar
2. Chandra, A. and Eastman, L. F., “Rectification at n-n GaAs: (GaAs)As Heterojunction,” Electron. Lett., 15, 91 (1979).Google Scholar
3. Chang, C.Y., Wu, B.S., Fang, Y.K. and Lee, R.H., “Optical and Electrical Current Gain in an Amorphous Silicon Bulk Barrier Phototransistor,” IEEE Electron. Device Lett. EDL–6, 3, 148(1985).Google Scholar