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Amorphous Silicon Ultra Thin Base Bipolar Phototransistor with High Performance (β=12, τ x ≤30μs)

  • C. Y. Chang (a1), B. S. Wu (a1), Y. K. Fang (a1) and R. H. Lee (a1)

Abstract

An n+ /i/p /i/n amorphous silicon bipolar transistor has been successfully fabricated with a current gain of 12 and a response speed of 30 yS This new structure of bipolar transistor has a very thin base (200Å), therefore, high gain and high speed is obtainable. This device has a very promising applications as a flat panel display transistor and a phototransistor in photosensing element/array and photo coupler. Electrical and optical characteristics have been extensively investigated. Theoretical model and experimental results are plausibly in good agreement.

Variation from the fundamental structure is also been developed, such as the Schottky emitter Al/i/p /i/n bipolar transistor.

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References

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1. Anderson, D.A. and Spear, W.E., Philos. Mag. 35, 1(1977).
2. Chandra, A. and Eastman, L. F., “Rectification at n-n GaAs: (GaAs)As Heterojunction,” Electron. Lett., 15, 91 (1979).
3. Chang, C.Y., Wu, B.S., Fang, Y.K. and Lee, R.H., “Optical and Electrical Current Gain in an Amorphous Silicon Bulk Barrier Phototransistor,” IEEE Electron. Device Lett. EDL–6, 3, 148(1985).

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