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Amorphous Ge/Si Multilayer Structures as Models for Optical Memories

Published online by Cambridge University Press:  21 February 2011

K. Järrendahl ,
R. Jansson ,
J.-E. Sundgren  and
H. Arwin
K. Järrendahl
Affiliation:
Department of Physics, Linköping Institute of Technology, S-581 83 Linköping, Sweden
R. Jansson
Affiliation:
Department of Physics, Linköping Institute of Technology, S-581 83 Linköping, Sweden
J.-E. Sundgren
Affiliation:
Department of Physics, Linköping Institute of Technology, S-581 83 Linköping, Sweden
H. Arwin
Affiliation:
Department of Physics, Linköping Institute of Technology, S-581 83 Linköping, Sweden
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Abstract

Prototype memory cells of a proposed three-bit memory device, whose optical read-out is based on the ellipsometric principle, nas been fabricated by deposition of 5 nm layers of amorphous silicon and amorphous germanium on crystalline silicon substrates. The differences in the ellipsometric parameters of memory cells corresponding to different logical states were much larger than the instrumental resolution. The possibility to optimize with respect to photon energy and angle of incidence is demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 535
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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